High-frequency (95GHz) and conventional (9.3GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance studies were made of the deep B acceptor in 6H-type material. The results supported a model in which the deep B acceptor consisted of a B atom on a Si site, with an adjacent C vacancy. The latter vacancy combined with a B atom along the hexagonal c-axis. It was concluded that 70 to 90% of the spin density resided in the Si dangling bonds which surrounded the vacancy, and another 9% on the neighboring C atoms. The spin-density distribution was more localized than in the case of the shallow B acceptor, as deduced from electron nuclear double resonance data.

A.V.Duijn-Arnold, T.Ikoma, O.G.Poluektov, P.G.Baranov, E.N.Mokhov, J.Schmidt: Physical Review B, 1998, 57[3], 1607-19