Defect concentrations in amorphous material, which were created by the implantation of 10MeV protons, were examined. The depth profiles of Si-Si bonds, E' centers, and peroxy radicals were close to that of the electronic energy loss. Interstitial O2 molecules were identified, and their concentration was found to be larger than that of the peroxy radicals. The total concentrations of Si-Si bonds and E' centers were comparable to those of the interstitial O2 molecules and peroxy radicals. The present results provided experimental evidence that O Frenkel defect formation occurred in the amorphous oxide due to dense electronic excitation. The efficiency of Frenkel defect formation was estimated to be about 5 x 10-7/eV.

H.Hosono, H.Kawazoe, N.Matsunami: Physical Review Letters, 1998, 80[2], 317-20