The passivation properties of local-oxidation-of-silicon oxide/Si interface defects were investigated by means of reverse-current measurements and capacitance transient spectroscopy of pn junction diodes that had a large LOCOS-defined perimeter. The LOCOS/Si interface defects had some properties which were similar to those of the SiO2/Si(100) interface states of metal-oxide-silicon diodes. However, there was a significant difference between the 2 interfaces with regard to the levels of unpassivated defects which remained after H2 annealing. The level was higher for a LOCOS/Si interface than for a MOS interface.

S.Fujieda, H.Nobusawa, M.Hamada, T.Tanigawa: Journal of Applied Physics, 1998, 84[5], 2732-4