The correlation between detrimental electrically-active interface traps, and electron spin resonance-active point defects - Pb0 and Pb1 (unpaired Si orbitals) - was studied via controlled variations of the defect bath densities. No electrical activity of Pb1, as an interface state, could be detected, while all of the Pb0 defects appeared to be active.

A.Stesmans, V.V.Afanasev: Physical Review B, 1998, 57[16], 10030-4