A kinetic model was used to explain the metal-organic vapor-phase epitaxial growth of this nitride. The model was based upon measured desorption rates, and upon assumed precursor dissociation and sticking probabilities. The model showed how the growth temperature and V/III ratio were linked with regard to the growth of high-quality films. By comparing reported growth conditions with the resultant quality of the material which was produced, it was deduced that optimum film growth occurred when the V/III ratio was chosen so as to be slightly larger than the N/Ga desorption ratio. The relationships between the growth temperature, V/III ratio and sample quality were explained in terms of how the growth parameters influenced the incorporation of Ga and N atoms into the growing film. The Ga and N diffusion lengths at 1050C were estimated to be between 2 and 20nm and less than 1nm, respectively, for reasonable metal-organic vapor-phase epitaxial growth rates. The growth conditions which were required to give a smooth (00•1) surface morphology were described in terms of the present growth model, and the possible origins of defect incorporation. As a result of the large N desorption rate, it was suggested that N was incorporated, during growth, via an adsorption/desorption cycle.

D.D.Koleske, A.E.Wickenden, R.L.Henry, W.J.DeSisto, R.J.Gorman: Journal of Applied Physics, 1998, 84[4], 1998-2004