Deep-level transient spectroscopic measurements of n-type epitaxial layers, which had been irradiated with 1MeV electrons, revealed an irradiation-induced electron trap at Ec - 0.18eV. The production rate was approximately 0.2/cm. This was lower than the rate (1/cm) which was found, for the N vacancy, by means of Hall-effect studies. The present defect trap could not be unambiguously identified.

Z.Q.Fang, J.W.Hemsky, D.C.Look, M.P.Mack: Applied Physics Letters, 1998, 72[4], 448-9