The removal of Si and Te ion-implantation damage was studied as a function of implantation dose, implantation temperature and annealing temperature. Transmission electron microscopy revealed that amorphous layers, which could result from high-dose implantation, recrystallized at temperatures of between 800 and 1100C to give a very defective polycrystalline material. Lower doses (down to 5 x 1013/cm2) produced specimens which were not amorphous, but were defective, after implantation. These also annealed poorly, at temperatures of up to 1100C, to leave a coarse network of extended defects. A high fraction of the Te was in substitutional positions after implantation and after annealing. Although high-temperature implantation resulted in less disorder after implantation, this damage was still impossible to anneal out completely at up to 1100C.

H.H.Tan, J.S.Williams, J.Zou, D.J.H.Cockayne, S.J.Pearton, J.C.Zolper, R.A.Stall: Applied Physics Letters, 1998, 72[10], 1190-2