The structures and local chemical compositions of planar defects in bulk and thin-film samples were characterized by means of high-resolution transmission electron microscopy and nanoprobe energy-dispersive spectroscopic analysis. The planar defects which were analyzed included stacking faults on (001) in bulk C11b material, stacking faults on (00▪1) in thin-film C40 samples and twin boundaries in thin-film C11b material. Dilatation of the lattice, perpendicular to the fault, and a Si deficiency were observed for (001) stacking faults in bulk C11b specimens. On the other hand, no significant compositional variation was noted across (00▪1) stacking faults in thin-film C40 samples and across twin boundaries in thin-film C11b material. In the case of the latter faults, rigid-body displacement of atoms was observed to occur across the twin habit plane in the parallel direction.

Structure and Chemistry of Planar Defects in Bulk and Thin Film MoSi2. H.Inui, T.Hashimoto, K.Ito, M.Yamaguchi, M.Kawasaki: Journal of Electron Microscopy, 1999, 48[6], 689-700