The electronic structures of stacking faults were calculated within the framework of local empirical pseudopotential theory. The stacking faults, in both zincblende- and wurtzite-structured samples, were predicted to introduce electronic levels within the band gap; with an energy that was 0.13eV above the valence-band top. These levels were found to originate from interface states in hetero-crystalline wurtzite(00•1)/zincblende(111) interfaces.

Z.Z.Bandic, T.C.McGill, Z.Ikonic: Physical Review B, 1997, 56[7], 3564-6