Low-temperature growth and rapid thermal annealing were used to intermix Al and Ga atoms in multiple quantum wells. The intermixed samples were characterized by using photoluminescence spectroscopy, and observed blue-shifts in photoluminescence energy were interpreted as being the result of modifications of the quantum-well shape; due to enhanced Al and Ga interdiffusion in the samples. The enhancement of interdiffusion was found to depend strongly upon the growth and annealing conditions. A saturation of Al and Ga interdiffusion was detected.

W.Feng, F.Chen, W.Q.Cheng, Q.Huang, J.M.Zhou: Applied Physics Letters, 1997, 71[12], 1676-8