Interface formation in the Zn/CdTe(100) system was investigated by using synchrotron and X-ray photo-electron spectroscopy. Five distinct phases of interface formation were identified, including the passivation of surface defects by small amounts of adsorbed Zn, diffusion of Zn into Cd vacancies and lattice-site defects, and Cd-Zn exchange; thus forming CdZnTe in a near-surface region. In the final stages of in-diffusion, significant Cd segregation was found and also, to a smaller extent, Te segregation. The formation of a metallic Zn over-layer at high Zn coverages was associated with a surface photo-voltage effect at room temperature. A simple method was described for the identification of the ternary CdZnTe surface-alloy having the maximum Zn content.

C.Heske, U.Winkler, D.Eich, R.Fink, E.Umbach, C.Jung, P.R.Bressler: Physical Review B, 1997, 56[20], 13335-45