An experimentally observed radiation-enhanced diffusion of dry-etch damage was further characterized by using Schottky diodes and deep-level transient spectroscopy. The use of deep-level transient spectra to monitor the effects of changes in ion dose-rate, and the application of laser radiation, showed that ion-induced defects which had a high diffusivity during ion-assisted processes were associated with primary point defects; such as interstitials and vacancies. The properties of ion-induced traps, as deduced from deep-level transient spectroscopic measurements, could be used to refine models for low-energy ion-induced damage.

C.H.Chen, Y.J.Chiu, E.L.Hu: Journal of Vacuum Science and Technology B, 1997, 15[6], 2648-51