Samples which had been grown by means of metal-organic chemical vapor deposition, and were n-doped with Si (2 x 1015, 8 x 1015 or 2 x 1016/cm3), were irradiated with 1.04GeV Br ions to a fluence of 5 x 109/cm2, with 1.7GeV I ions to a fluence of 2.7 x 109/cm2, and 1.5GeV Au ions to fluences ranging from 106 to 2.2 x 109/cm2. The effects were analyzed by using photoluminescence spectroscopy. Donor-to-Ga vacancy and donor-to-Si acceptor transitions were observed in the photoluminescence spectra of the irradiated samples. The former occurred at 1.476eV, and the latter at 1.483eV, when the temperature was 6.5K. The relative introduction rates of VGa and SiAs defects for these ions were compared to those obtained when electrons, protons, alpha particles, Li ions or O ions were the irradiating particles. The measured values could be related to relativistic (Darwin-Rutherford) or non-relativistic (Rutherford) scattering theory; depending upon the projectile energy.

C.Carlone, M.Parenteau, S.M.Khanna: Journal of Applied Physics, 1998, 83[10], 5164-70