Defect clusters at grown-in dislocations, which were typical of heavily Te-doped material, were studied at high spatial resolution. A mechanism for the generation of extrinsic dislocation loops around grown-in dislocations was proposed which was based upon a supersaturation of Ga interstitials. Such a supersaturation was caused by an undersaturation of Ga vacancies which was associated with the formation of TeAsVGa acceptors, in the surroundings of grown-in dislocations, because of the gettering of Te by such dislocations.

C.Frigeri, J.L.Weyher, J.Jimínez, P.Martin, S.Müller: Solid State Phenomena, 1997, 57-58, 425-30