The diffusion of Zn into n-doped substrates was studied by using diffusion from the vapour phase, in a pseudo-closed box system, or diffusion from a Ga-Sb-Zn melt. It was demonstrated that reproducible formation of Zn diffusion profiles in n-type material was possible by using the technologically simple pseudo closed-box diffusion method. This method permitted good control over Zn surface concentrations and junction depths.

A.W.Bett, S.Keser, O.V.Sulima: Journal of Crystal Growth, 1997, 181, 9-16