The trapping of 2 different point defects, which were produced by electron irradiation, at 111In probes was studied, as a function of the Fermi level, by means of perturbed angular correlation spectroscopy. The defects were identified as being monovacancies and self-interstitials. An acceptor state for the vacancy at Ev + 0.20eV, and a possible donor state for the interstitial close to the conduction band (Ec - 0.040eV), were deduced from the trapping behavior. Long-range migration of the neutral vacancy and of the positive interstitial took place at 200 and 220K, respectively.

H.Haesslein, R.Sielemann, C.Zistl: Physical Review Letters, 1998, 80[12], 2626-9