Intrinsic stresses in the Stranski-Krastanov system, Ge/Si(001), were investigated at temperatures ranging from 700 to 1050K. The observation of characteristic stress features indicated that relief of the misfit strain proceeded in 2 main steps. These were the formation of 3-dimensional islands on top of the Ge wetting layer, and the appearance of misfit dislocations in larger 3-dimensional islands; and their percolation. The temperature dependence of strain relief by the islands, as well as their nucleation and growth behavior, supported a kinetic pathway for 3-dimensioanl islanding.

G.Wedler, J.Walz, T.Hesjedal, E.Chilla, R.Koch: Physical Review Letters, 1998, 80[11], 2382-5