The texture, morphology, diffusion and electrical activation of dopants in polycrystalline GeSi and Si were studied. It was found that the diffusion of dopants was different for GeSi. That is, B diffused more slowly and As exhibited much more rapid diffusion in GeSi. In B-doped samples, both electrical activation and mobility were higher as compared to polycrystalline Si. Data on BF2-doped layers were presented which exhibited the same trends as B-doped samples, but with an overall higher sheet resistance. In the case of As doping, the activation and mobility were lower as compared with polycrystalline material; thus resulting in a higher sheet resistance.

C.Salm, D.T.Van Veen, D.J.Gravesteijn, J.Holleman, R.H.Woerlee: Journal of the Electrochemical Society, 1997, 144[10], 3665-73