Transmission electron microscopic observations of the In0.52Al0.48As/InxGa1-xAs /In0.52Al0.48As system, grown onto a (001)InP substrate, revealed that misfit dislocation lines deviated from <110> directions at an angle whose magnitude depended upon the Ga content. This abnormal alignment of misfit dislocations was explained in terms of an alloying effect upon the formation of single jogs on misfit dislocations, in the interface between the III-V ternary compounds.

J.Wu H.X.Li, T.W.Fan, Z.G.Wang: Applied Physics Letters, 1998, 72[3], 311-3