The surface morphology and crystal structure of InAlAs films which had been grown, using molecular beam epitaxy, onto (111)B InP substrates were investigated. The substrates were misoriented by 1º toward [¯211]. Combined plan-view transmission electron microscopy and atomic force microscopy revealed spectacular terrace-like topographies which were induced by surface step-bunching during growth. Cross-sectional transmission electron microscopy revealed the presence of threading dislocations which were related to the giant steps, as well as strain inhomogeneities that were attributed to compositional modulations.

N.Bécourt, F.Peiró, A.Cornet, J.R.Morante, P.Gorostiza, G.Halkias, K.Michelakis, A.Georgakilas: Applied Physics Letters, 1997, 71[20], 2961-3