The mismatch interface between these materials was investigated. High-resolution transmission electron microscopic images revealed the presence of strain-relieving 90º misfit dislocations at this interface. Hall measurements and electrochemical capacitance-voltage profiling indicated the presence of a high-density sheet of carriers (electrons and holes) at the interface. A correlation was found between interfacial carriers and misfit dislocations. A model that was based upon Fermi-level pinning by misfit dislocations, in InAs at the interface, was suggested to account for the observed electrical behavior.

V.Gopal, E.P.Kvam, T.P.Chin, J.M.Woodall: Applied Physics Letters, 1998, 72[18], 2319-21