The diffusion of Zn acceptors was studied by using a metal-organic vapor-phase diffusion technique. This accurately controlled the diffusion depth in the sub-micron range. The effect of annealing upon Zn diffusion profiles was found to be the activation of Zn acceptors, as in the case of InP. The maximum hole concentration of 1019/cm3 was attained for Zn diffusion in InAsP.

M.Wada, K.Izumi, K.Sakakibara: Applied Physics Letters, 1997, 71[7], 900-2