A novel compliant GaAs substrate was formed by wafer-bonding a 3nm GaAs layer, to a bulk GaAs crystal, so that there was a large angular misalignment about their common normals. Epitaxial layers of InSb, which had an approximately 15% lattice mismatch with respect to GaAs, were grown onto these novel substrates or onto conventional GaAs substrates. Transmission electron microscopy revealed that the InSb films which were grown onto the new substrates contained no detectable threading dislocations, whereas the InSb films on conventional substrates exhibited dislocation densities as high as 1011/cm2. These results suggested that the defect-free hetero-epitaxial growth of very highly mismatched crystals could be achieved by using the present novel substrates.

F.E.Ejeckam, M.L.Seaford, Y.H.Lo, H.Q.Hou, B.E.Hammons: Applied Physics Letters, 1997, 71[6], 776-8