It was recalled that cavities which were formed by H implantation, and subsequent annealing, could provide strong sinks for metal interstitials and were ideal gettering sites for metal impurities. The effect of cavities upon the transient enhanced diffusion of B was studied here. The B implantation was carried out on wafers which contained pre-formed cavities, and the transient enhanced diffusion of B was suppressed during subsequent annealing. In some cases, the B was introduced into an amorphous layer, and the presence of cavities was again observed to reduce the degree of transient enhanced diffusion which occurred.

J.Wong-Leung, J.S.Williams, M.Petravic: Applied Physics Letters, 1998, 72[19], 2418-20