The dependence of transient enhanced diffusion upon the implanted species was investigated by the simulation of transient enhanced diffusion; as introduced by P, As, and Si implantation. A transient enhanced diffusion enhancement at short annealing times depended critically upon the effective diffusivities of the implanted species. Fast P diffusion, which introduced a self-interstitial supersaturation with respect to the pseudo-equilibrium concentration, further increased transient enhanced diffusion. Therefore, the transient enhanced diffusion which was introduced by P implantation was faster than that by caused by As and Si; where the self-interstitials were in thermal equilibrium. At longer annealing times, the enhancement was governed mainly by self-interstitial diffusion which depended upon the carrier concentration and the implanted range, or the proximity of the damage to the surface. Faster self-interstitial diffusion led to less enhancement. The carrier concentration, which also affected the effective dopant diffusivities and the duration of transient enhanced diffusion, varied with dose and annealing time. The dependence upon implantation species was therefore closely related to variations in dose, energy, and annealing time; which led to complex transient enhanced diffusion characteristics.

M.Uematsu: Journal of Applied Physics, 1998, 83[1], 120-5