The amount of implanted P that piled up at the Si surface during heating (800 to 1000C, 180s) was investigated as a function of the ambient atmosphere. The amount was found to be greater in O than in N ambients at 900C. It was concluded this was due to the larger amount of P that arrived at the surface, from within the specimen, when an O ambient was used. This, in turn, was attributed to oxidation-enhanced diffusion and transient enhanced diffusion. Oxide growth at 1000C was expected to have generated Si interstitials at the Si surface. In spite of this, there was little difference in the profiles for the 2 atmospheres. It was therefore concluded that, at 1000C, excess Si interstitials contributed little to the enhancement of P diffusion. That is, the diffusion coefficients and surface annihilation rates of the Si interstitials were too high to enhance P diffusion.

Y.Sato, M.Itsumi: Japanese Journal of Applied Physics - 1, 1997, 36[3A], 1047-8