In order to estimate the spatial extent of defect clusters which were introduced by single Ar ion irradiation, an analysis was made of the dependence of the series resistance of ion-irradiated Schottky diodes upon the total ion dose. The 75keV Ar ions were implanted at room temperature to doses which ranged from 1010 to 1015/cm2. The series resistance increased by 2 orders of magnitude between 1012 and 1013/cm2. The diameter of high-resistivity regions which were introduced by a single ion impact was equal to 21nm under the present experimental conditions. It was concluded that heavily damaged regions around amorphous cores were responsible for the high-resistivity regions.

M.Koyama, C.Cheong, K.Yokoyama, I.Ohdomari: Japanese Journal of Applied Physics - 2, 1997, 36[6A], L708-10