A study was made of the trapping kinetics of defects during carrier capture in heavily damaged samples, where the damage was introduced by MeV heavy-ion doses which were near to, but below, the amorphization threshold. By using spectroscopic junction transient measurements, unambiguous evidence was found for charge redistribution between defects. The results implied that changes in the occupancy of gap states were responsible for the deepening of emission energies with filling time; as commonly observed during transient experiments on disordered Si.

P.K.Giri, S.Dhar, V.N.Kulkarni, Y.N.Mohapatra: Physical Review B, 1998, 57[23], 14603-6