A microstructural analysis of Si-on-insulator samples, prepared by high-dose O-ion implantation, was performed by means of Raman scattering. The samples were obtained using different conditions, thus leading to differing concentrations of defects in the top layer. The samples were implanted while the surface was covered with SiO2 capping layers having various thicknesses. The spectra from as-implanted samples were fitted to a correlation-length model which took account of the possible presence of stress effects in the spectra. This permitted the quantification of disorder effects, which were determined by structural defects, and residual stresses in the top Si layer before annealing. These data were related to the density of dislocations which remained in the layer after annealing. Analysis corroborated the existence of 2 mechanisms which generated defects, in the top layer, that were related to the surface conditions during implantation and to the proximity of the top Si/buried-oxide layer interface to the surface before annealing.

J.Macía, E.Martin, A.Pérez-Rodríquez, J.Jiménez, J.R.Morante, B.Aspar, J.Margail: Journal of Applied Physics, 1997, 82[8], 3730-5