Monocrystalline material was implanted with 60keV F and 20keV B ions, and annealed. The carrier profile, F and B redistribution, and p+-n junctions were investigated. Two specific regions were observed, in ion-implanted material, in which peculiarities in carrier concentration, resistivity, and F-atom redistribution occurred. It was proposed that a so-called under-surface specific region was enriched with vacancy-type defects, while an amorphous/crystalline interface region was enriched with interstitial-type defects. After annealing at a temperature which corresponded to the reverse annealing phenomenon, B atoms were activated in the under-surface and were deactivated in the amorphous/crystalline interface region.

L.Y.Krasnobaev, J.J.Cuomo, O.I.Vyletalina: Journal of Applied Physics, 1997, 82[10], 5185-90