Pre-amorphous damage in p-type samples which had been implanted with MeV Si ions, and annealed at high temperatures, was characterized by using deep-level transient spectroscopy and transmission electron microscopy. The p-type material was implanted with 4MeV Si to doses ranging from 1013 to 1014/cm2 and then annealed (800C, 0.25h). For doses below a critical value, a sharp peak was observed in the deep-level transient spectrum and this corresponded to the signature of point defects. When above a critical dose, a broad deep-level transient spectroscopic peak was obtained; thus indicating the presence of extended defects. These results were consistent with transmission electron microscopic observations, where extended defects were observed only for doses above the critical value. It was suggested that there existed a critical dose at which point defects, arising from implantation, could act as nuclei for extended defect formation.

S.Fatima, J.Wong-Leung, J.Fitzgerald, C.Jagadish: Applied Physics Letters, 1998, 72[23], 3044-6