Residual defects in medium-energy (40keV) and low-dose (5 x 1014/cm2) Sb-implanted samples after annealing (1000C, 600s to 0.5h) were investigated by means of transmission electron microscopy and secondary ion mass spectroscopy. These annealing conditions gave rise to the formation of 2 new types of residual defect: irregularly shaped defects with an amorphous structure, and rod-shaped defects which were surrounded by four {111} planes that extended in <110> directions on both sides of an initial amorphous/crystalline interface. These were in addition to well-known hexagonal Sb precipitates. It was suggested that rod-shaped defects grew from irregularly shaped defects during long-term annealing.

F.Uesugi, Y.Kikuchi, K.Watanabe, I.Hoshimoto: Journal of Applied Physics, 1998, 83[10], 5159-63