Deep-level transient spectroscopic studies, of NiSi2 plate-like precipitates in n-type material, revealed an electric field dependence of the spectra at relatively low fields (below 5 x 104V/cm). A model was proposed, for the electric field-enhanced emission of free carriers (Poole-Frenkel effect) which took account of the role played by the deformation potential of the bounding dislocation loop of the precipitates. Assuming that the defects acted as recombination centres, the qualitative aspects of simulations agreed with the experimental results. It was shown that the criterion for band-like states at extended defects remained valid, regardless of the Poole-Frenkel effect.

H.Hedemann, W.Schröter: Solid State Phenomena, 1997, 57-58, 293-8