A simulation of dislocation sources was developed in order to examine how dislocation dynamics and multiplication governed the initial stages of plastic flow in diamond cubic crystals. The numerical method was modified by introducing specific dislocation properties which reflected the existence of a high Peierls forces. Most of the results which were obtained could be qualitatively interpreted in terms of the various contributions to the effective stress upon dislocation segments, and the particular nature of the stress versus velocity laws in Si. Back-stresses in the slip plane, and in the cross-slip plane, were investigated under upper yield point conditions.

A.Moulin, M.Condat: Materials Science and Engineering A, 1997, 234-236, 406-9