The electronic properties of deformed n-type material were investigated by using deep-level transient spectroscopy. The 4 known deformation-induced levels (conventionally labelled A, B, C, and D) were found. Their study, as a function of deformation parameters and thermal stability, led to the conclusion that only the C-line (located 0.40eV from the conduction-band edge) could be attributed to dislocations. The characteristics of this line were investigated by taking advantage of the fact that, due to the deformation conditions used, it could be clearly resolved in the spectra. Deep-level transient spectroscopic peaks were simulated by the introduction of a broadening parameter, whose dependence upon the dislocation density was analyzed in terms of crystalline disorder and inhomogeneity of the Coulomb potential along the dislocation line.

D.Cavalcoli, A.Cavallini, E.Gombia: Physical Review B, 1997, 56[16], 10208-14