Studies of point defect diffusion, aimed at explaining macroscopic distributions of grown-in crystal defects in melt-grown single crystals, were reviewed. It was shown that disagreements between previous proposed diffusion models could be removed by using phenomenological diffusion theory. With regard to the interpretation of the behavior of an anomalous oxide-precipitate zone in melt-grown Si single crystals, it was pointed out that the densities of interstitials and vacancies which were taken into crystals at the growing interface were greater than their equilibrium levels; and increased with increasing growth rate.

R.Habu, K.Kawakami, M.Hasebe: Solid State Phenomena, 1997, 57-58, 27-36