Transient measurements of the temperature-dependent lifetime variation as a function of the excitation conditions were used to distinguish between carrier recombination and trapping processes. Using transient microwave absorption and electron beam induced current techniques, a correlation was found between the recombination energy levels and the trapping centers of O-related defects. The recombination and trapping centers which were connected with substrate defects were distinguished by means of a comprehensive simulation of the temperature dependences of carrier lifetimes.

E.Gaubas, J.Vanhellemont, E.Simoen, C.Claeys, W.Seifert: Solid State Phenomena, 1997, 57-58, 155-60