Czochralski-grown samples, with interstitial O contents ranging from 6.5 x 1017 to 1.1 x 1018/cm3, exhibited the stress-enhanced creation of thermal donors during annealing (670 to 1000K, up to 20h) under an Ar pressure of up to about 1.6GPa. This effect depended upon the initial O concentration, and was related to pre-annealing conditions. The pressure-stimulated phenomena were explained tentatively in terms of pressure-induced Oi clustering, with the creation of O-related defects that exhibited electrical activity.

A.Misiuk, W.Jung, B.Surma, J.Jun, M.Rozental: Solid State Phenomena, 1997, 57-58, 393-8