Shottky barriers were formed by the vacuum deposition of Cu onto CdS thin films. The impurity profile which was deduced from the reverse differential capacitance revealed evidence of Cu diffusion between 20 and 200C. An activation energy of 0.72eV was found for the temperature dependence of the diffusivity.

B.Lepley, O.H.Nguyen, C.Boutrit, S.Ravelet: Journal of Physics D, 1979, 12[11], 1917-28