The ability of charged H to drift in this material was used to investigate the behavior of H. It was concluded that diffusion within the above temperature range was entirely trap-limited, and exhibited no dependence upon the diffusivity of free H. By drifting H away from the donors in hydrogenated n-type GaAs, reactivation of the passivated donors could be studied. Thermal dissociation of the donor-H complex obeyed first-order kinetics, with a dissociation energy of 1.52eV.

A.W.R.Leitch, T.Zundel, T.Prescha, J.Weber: Materials Science Forum, 1992, 83-87, 21-6