Material was deposited by means of metalorganic chemical vapor deposition, and was simultaneously doped with Si (donor) and Zn (acceptor) species during growth. It was found that the incorporation of Si was not affected by the presence of Zn, whereas Zn incorporation was markedly enhanced by the presence of Si. The results were consistent with the formation of donor-acceptor pairs.

C.Blaauw, L.Hobbs: Applied Physics Letters, 1991, 59[6], 674-6