Ion-beam mixing was investigated by means of molecular dynamics simulations. The degree of mixing in an amorphous element, as compared with its crystalline counterpart, was found to be larger by a factor of 2 or more. Mixing in semiconductors was found to be significantly larger than that in a face-centered cubic metal of similar mass and atomic density. The difference in mixing between amorphous and crystalline materials was attributed to local relaxation mechanisms which operated during the cooling phase of cascades. A comparison of mixing in semiconductors and metals showed that short-range structural order also had an appreciable effect upon mixing.
Mechanisms of Ion Beam Mixing in Metals and Semiconductors K.Nordlund, M.Ghaly, R.S.Averback: Journal of Applied Physics, 1998, 83, 1238-46