The nature of the secondary defect microstructure which was produced in II-VI compounds by 100keV electron beam irradiation was studied. The susceptibility to damage was found to follow the trend: ZnS > CdS > ZnSe > CdTe > ZnTe. Absorption of the new point defects by native dislocations, leading to dislocation climb, permitted an estimation to be made of the radiation-enhanced diffusivity.

Y.Y.Loginov, P.D.Brown, N.Thompson, K.Durose: Journal of Crystal Growth, 1992, 117, 682-8