It was recalled that the deep levels in Cd0.8Zn0.2Te had not yet been fully characterized. An investigation of p-type semi-insulating material was made here by using cathodoluminescence and photo-induced current transient spectroscopic methods. This permitted the detection of deep levels which were not revealed by using the usual current spectroscopic techniques. Five levels were detected, at 0.16, 0.25, 0.57, 0.78 and 1.1eV. By combining the results with the above cathodoluminescence techniques, the donor or acceptor nature of some of the levels could be deduced. It was confirmed that a key role, in controlling the carrier transport properties, was played by the 0.78eV level.

A.Castaldini, A.Cavallini, B.Fraboni, L.Polenta, P.Fernandez, J.Piqueras: Physical Review B, 1996, 54[11], 7622-5