Formation of the {1¯2•0} stacking fault, which had 2 atomic configurations in wurtzite, was investigated by means of high-resolution electron microscopy and energy calculations. A modified Stillinger-Weber potential was used to investigate the relative stability of the 2 atomic configurations which had comparable energy in AlN, whereas the ½<10•1>{1¯2•0} atomic configuration was expected to be more stable in GaN and InN. Plan-view observations revealed the 2½<10•1>{1¯2•0} configuration in GaN layers. The 1/6<20•3> configuration was found in small areas, within the AlN buffer layer, in cross-sectional observations. It folded rapidly to the basal plane and, when back in the prismatic plane, it had the ½<10•1>{1¯2•0} configuration.

Formation Mechanism and Relative Stability of the {11¯20} Stacking Fault Atomic Configurations in Wurtzite (Al,Ga,In) Nitrides P.Ruterana, B.Barbaray, A.Béré, P.Vermaut, A.Hairie, E.Paumier, G.Nouet, A.Salvador, A.Botchkarev, H.Morkoç: Physical Review B, 1999, 59[24], 15917-25