The interaction between dislocations and O atoms was studied. It was concluded that the unlocking stress, which was assumed to be determined by the number of O atoms at the dislocation core, exhibited 3 clearly different ranges; depending upon the annealing temperature and time. In one range, the unlocking stress increased almost linearly with the annealing time. The unlocking stress saturated with increasing annealing time,. The temperature dependence of the saturation stress was used to deduce that the binding energy of O to dislocations was 1.05eV.
The Segregation Behaviour of Oxygen at Dislocations in Silicon S.Senkader, P.R.Wilshaw, D.Gambaro, R.J.Falster: Solid State Phenomena, 1999, 69-70, 321-6