The use of slow positron beams to study the damage which resulted from ion implantation was described. Measurement of the damage which resulted from 125keV Si implantation was used as an example to demonstrate the sensitivity of the technique to implant fluences of less than 1011/cm2. A method for extracting defect profiles was described, and it was shown that a defect tail extended into the sample. This was attributed to ion channelling effects.
Applying Slow Positrons to the Study of Ion Implantation Induced Defects in GaAs A.P.Knights, F.Malik, P.G.Coleman, R.Gwilliam, B.J.Sealy: Materials Science and Engineering B, 1999, 66[1-3], 146-50