It was found that Co islands which were grown onto Cu(111), with a stacking fault at the interface, exhibited a conductance in the empty electronic states which was greater than that for Co islands which followed the stacking sequence of the Cu substrate. It was noted that electrons could be more easily injected into these faulted interfaces. The electronic states which were associated with the stacking fault were visualized by means of tunnelling spectroscopy, and their origin was identified by means of band-structure calculations.
Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunnelling Spectroscopy. A.L.Vázquez de Parga, F.J.García-Vidal, R.Miranda: Physical Review Letters, 2000, 85, 4365-8