This paper reviews some fundamental aspects of point defect migration and agglomeration in crystalline Si. Both in situ and ex situ measurements were used to reach this target. Room temperature diffusivities of 1.5 x 10-15 and 3.0 x 10-13cm2/s for I and V, respectively, were obtained using in situ leakage current measurements, performed during and just after ion implantation. To follow the defect evolution and clustering upon annealing, ex situ optical and electrical measurements were used. Low-temperature (300 to 500C) annealing caused the formation of point-like defects, while higher temperatures (500 to 800C) were necessary to have defect clustering. Finally, a well-defined dose (1013Si/cm2 in pure Si) temperature (650C) and time thresholds exist for the transition from I-clusters to extended {311} defects. When the transition takes place, both the optical and electrical defect properties undergo a dramatic change, suggesting an abrupt structural transition in the evolution from I-cluster to {311} defects. Kinetic lattice Monte-Carlo simulations used to model the defect agglomeration and growth confirm these results.

Point Defect Diffusion and Clustering in Ion-Implanted c-Si. S.Libertino, S.Coffa, C.Spinella, A.La Magna, V.Privitera: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 25-32