A comprehensive study of the effects of tunnelling upon I-V characteristics and deep-level trap spectroscopic data was carried out on GaAs/InxGa1-xAs/GaAs single quantum wells, where x was equal to 0.15 or 0.24. Deep-level transient spectra exhibited a typical plateau-like feature which was attributed to tunnelling emission from the InGaAs quantum well. A hole trap, H1, with an activation energy of 0.52 to 0.56eV, was observed in all of the samples. This hole trap was attributed to Ga vacancies in bulk GaAs.

A.Z.Wang, W.A.Anderson: Solid-State Electronics, 1995, 38[3], 673-8